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Gallium nitride – the path to the conquest of radio frequency microcircuits

GaN is a rather promising material that is used to create LEDs emitting blue light, as well as laser diodes in the blue (400-450 nm) range. But the appearance of impurities in GaN during its growth limited its use in RF microcircuits.

Nitronex Corp develops new technology capable of growing clear GaN on wafers. This technology of growing crystals is called pendeoepitaxy. Pendeoepitaxy made it possible to grow GaN on 4 ” and 6 ” silicon wafers. Using this technology, GaN can also be grown on sapphire and SiC wafers, which are much more expensive than conventional silicon.

GaN ICs Outperform Other RF and High Power Technologies.

The charge density in GaN is 6 times that of silicon, so GaN amplifier transistors can have an output power of 100-200 watts, which is very valuable for applications such as, say, a base station transmitter. Moreover, the output characteristics of GaN are even more linear than those of toxic GaAs and expensive InP. In addition, the frequency properties of GaN do not lag behind the energy properties – the GaN transistor operates at frequencies up to 40 GHz.

Naturally, the first Nitronex products will be high-power discrete transistors. And then the company plans to go further and build GaN integrated circuits and combo large ICs.

The head of Nitronex Bob Lynch put it very clearly on this matter. “25 years ago we knew about the existence of such a material as gallium nitride, but no one could make a working transistor out of it. Studying its physical properties, we thought that if someone thought of a way to grow GaN crystals, then the dreams of chip design engineers would come true. And now those dreams seem to have come true. “.

What can I add – the prospects for GaN semiconductor technology are definitely very bright. Like a young company that managed to patent its technology.

Source: Silicon strategies

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